Direct MOVPE growth of HgCdTe on Si substrates for long-wavelength infrared photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2744, Issue , 1996, Pages 14-22

  Maruyama, Kenji ^a   Ebe, Hiroji ^a   Nishino, H ^a   Okamoto, T ^a   Murakami, S ^a   Saito, T ^a   Nishijima, Y ^a   Wada, Hideo ^a   Nagashima, M ^a   Nogami, Yashiroh ^a   Tanikawa, Kunihiro ^a   Shirahata, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EFFICIENCY; LIQUID PHASE EPITAXY; ORGANOMETALLICS; PHOTODIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

LONG-WAVELENGTH INFRARED PHOTODIODES; MERCURY CADMIUM TELLURIDE;

INFRARED DETECTORS;

EID: 0029765966     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1117/12.243468     Document Type: Conference Paper

References (12)