Rapid growth of II-VI laser structures by compound-source molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2693, Issue , 1996, Pages 2-9

  Tsujimura, Ayumu ^a   Nishikawa, Takashi ^a   Ohkawa, Kazuhiro ^a   Sasai, Yoichi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR LASERS;

RAPID GROWTH; WIDE-BAND-GAP STRUCTURES; ZINC SELENIDE;

SEMICONDUCTOR GROWTH;

EID: 0029765909     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1117/12.238951     Document Type: Conference Paper

References (14)