Effect of ambient gas pressure on pulsed laser ablation plume dynamics and ZnTe film growth

Materials Research Society Symposium - Proceedings

Volumn 397, Issue , 1996, Pages 119-124

  Rouleau, C M ^a   Lowndes, D H ^a   Strauss, M A ^a   Cao, S ^a   Pedraza, A J ^a   Geohegan, D B ^a   Puretzky, A A ^a   Allard, L F ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HALL EFFECT; LASER ABLATION; NITROGEN; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

EX SITU HALL EFFECT; HALL MOBILITY; LATTICE MISMATCH; PULSED LASER ABLATION; TIME RESOLVED ION PROBE MEASUREMENTS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0029765880     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (27)