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Volumn 395, Issue , 1996, Pages 553-557
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Temperature dependence of the absorption band gap edge of GaN
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
CRYSTAL DEFECTS;
DISLOCATIONS (CRYSTALS);
ENERGY GAP;
EXCITONS;
FILM GROWTH;
LIGHT ABSORPTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
TEMPERATURE;
THIN FILMS;
ABSORPTION BAND GAP EDGE;
ABSORPTION SPECTRA;
GALLIUM NITRIDE;
TEMPERATURE DEPENDENCE;
NITRIDES;
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EID: 0029763867
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (17)
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