Single crystal wurtzitic aluminum nitride growth on silicon using supersonic gas jets

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 319-324

  Ustin, S A ^a   Lauhon, L ^a   Brown, K A ^a   Hu, D Q ^a   Ho, W ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; JETS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; SUPERSONIC FLOW; X RAY CRYSTALLOGRAPHY;

FULL WIDTH HALF MAXIMA; KINETIC ENERGY; PRECURSORS; SEEDING; SUPERSONIC GAS JETS; SURFACE ANALYSIS; TRIETHYLALUMINUM; WURTZITIC ALUMINUM NITRIDE; X RAY ROCKING CURVE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0029763865     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)