Trace-element accelerator mass spectrometry: a new technique for low-level impurity measurements in semiconductors

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 395-400

  Datar, S A ^a   Renfrow, S N ^a   Anthony, J M ^a   McDaniel, F D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CRYSTAL IMPURITIES; PHOSPHORUS; RADIOISOTOPES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON; TRACE ELEMENTS;

ACCELERATOR MASS SPECTROMETRY; DEPTH PROFILES; MOLECULAR INTERFERENCE; TRACE ELEMENT ACCELERATOR MASS SPECTROMETRY;

MASS SPECTROMETRY;

EID: 0029762544     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)