Closed-loop thickness control of resonant-tunneling diode MBE growth using spectroscopic ellipsometry

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 365-370

  Celii, F G ^a   Kao, Y C ^a   Moise, T S ^a   Woolsey, M ^a   Harton, T B ^a   Haberman, K ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED LOOP CONTROL SYSTEMS; ELECTRIC PROPERTIES; ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THICKNESS CONTROL;

ALUMINUM ARSENIDE; CLOSED LOOP THICKNESS CONTROL; INDIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; PRE GROWTH FLUX CALIBRATIONS; RESONANT TUNNELING DIODE; TIMING BASED SHUTTER OPENINGS;

TUNNEL DIODES;

EID: 0029762543     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)