Iridium silicides formed by RTA in vacuum

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 599-604

  Rodriguez, T ^a   Almendra, A ^a   Botella, M ^a   Da Silva, M F ^a   Soares, J C ^a   Wolters, H ^a   Ballesteros, C ^a  

^a DTE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION IN SOLIDS; ELECTRON MICROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); IRIDIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; VACUUM APPLICATIONS; X RAY DIFFRACTION;

FILM THICKNESS; IRIDIUM SILICIDES; MICRODIFFRACTION; RAPID THERMAL ANNEALING;

SEMICONDUCTING FILMS;

EID: 0029762498     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)