메뉴 건너뛰기




Volumn 79, Issue 1, 1996, Pages 275-278

Low-temperature synthesis of aluminum silicon carbide using ultrafine aluminum carbide and silicon carbide powders

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; LOW TEMPERATURE OPERATIONS; POWDERS; PYROLYSIS; SILICON CARBIDE; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

EID: 0029760792     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb07909.x     Document Type: Article
Times cited : (22)

References (14)
  • 5
    • 2342589731 scopus 로고
    • Preparation and Properties of Sintered Materials in the Systems Si-Al-C and Si-Ti-C
    • Materials Science Monographs, Edited by M. M. Ristic. Elsevier Scientific Publishing Co., New York
    • J. Schoennahl, B. Willer, and M. Daire, "Preparation and Properties of Sintered Materials in the Systems Si-Al-C and Si-Ti-C"; pp. 338-45 in Materials Science Monographs, Vol. 4, Sintering - New Developments. Edited by M. M. Ristic. Elsevier Scientific Publishing Co., New York, 1979.
    • (1979) Sintering - New Developments , vol.4 , pp. 338-345
    • Schoennahl, J.1    Willer, B.2    Daire, M.3
  • 7
    • 4243172522 scopus 로고
    • Crystal Structure and Microstructure of Some New Silicon Aluminium Carbonitrides
    • R. J. Oscroft, P. Korgul, and D. P. Thompson, "Crystal Structure and Microstructure of Some New Silicon Aluminium Carbonitrides," Br. Ceram. Proc., 42, 33-47 (1989).
    • (1989) Br. Ceram. Proc. , vol.42 , pp. 33-47
    • Oscroft, R.J.1    Korgul, P.2    Thompson, D.P.3
  • 8
    • 0008370685 scopus 로고
    • Influence of Oxygen on the Formation of Aluminum Silicon Carbide
    • R. J. Oscroft and D. P. Thompson, "Influence of Oxygen on the Formation of Aluminum Silicon Carbide," J. Am. Ceram. Soc., 75, 224-26 (1992).
    • (1992) J. Am. Ceram. Soc. , vol.75 , pp. 224-226
    • Oscroft, R.J.1    Thompson, D.P.2
  • 11
    • 0007303696 scopus 로고
    • Electronic Conduction in Silicon Carbide
    • J. T. Kendall, "Electronic Conduction in Silicon Carbide," J. Chem. Phys., 21, 821-27 (1953).
    • (1953) J. Chem. Phys. , vol.21 , pp. 821-827
    • Kendall, J.T.1
  • 12
    • 0041620543 scopus 로고
    • Silicon Carbide Contamination of Epitaxial Silicon Grown by Pyrolysis of Tetramethylsilane
    • Y. Avigal and M. Schieber, "Silicon Carbide Contamination of Epitaxial Silicon Grown by Pyrolysis of Tetramethylsilane," J. Cryst. Growth, 9, 127-31 (1971).
    • (1971) J. Cryst. Growth , vol.9 , pp. 127-131
    • Avigal, Y.1    Schieber, M.2
  • 13
    • 33744717782 scopus 로고
    • The Growth of Hetero-epitaxial SiC Films by Pyrolysis of Various Alkyl-Silicon Compounds
    • Y. Avigal, M. Schieber, and R. Levin, "The Growth of Hetero-epitaxial SiC Films by Pyrolysis of Various Alkyl-Silicon Compounds," J. Cryst. Growth, 24/25, 188-92 (1974).
    • (1974) J. Cryst. Growth , vol.24-25 , pp. 188-192
    • Avigal, Y.1    Schieber, M.2    Levin, R.3
  • 14
    • 0023090342 scopus 로고
    • Preparation of Ultrafine SiC Powders by Pyrolysis of Tetramethyldisilane
    • M. Endo, T. Sano, K. Mori, N. Urasato, and M. Shiraishi, "Preparation of Ultrafine SiC Powders by Pyrolysis of Tetramethyldisilane," Yogyo Kyokaishi, 95, 114-20 (1987).
    • (1987) Yogyo Kyokaishi , vol.95 , pp. 114-120
    • Endo, M.1    Sano, T.2    Mori, K.3    Urasato, N.4    Shiraishi, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.