Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact

IEEE Photonics Technology Letters

Volumn 8, Issue 1, 1996, Pages 49-51

  Wang, Xinqiao ^a,c   Lu, Bo ^a,b   Hersee, S D ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SDL INC   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTINUOUS WAVE LASERS; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH POWER LASERS; IMAGING TECHNIQUES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

HIGH POWER UNSTABLE RESONATOR SEMICONDUCTOR LASER; TRANSPARENT INDIUM TIN OXIDE CONTACT;

SEMICONDUCTOR LASERS;

EID: 0029757836     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475774     Document Type: Article

References (11)

1. A. H. Paxton and G. C. Dente, "Filament formation in semiconductor laser gain regions," J. Appl. Phys., vol. 70, pp. 2921-2925, 1991.
2. F. Girardin, G. H. Duan, and A. Talneau, "Modeling and measurement of spatial-hole-burning applied to amplitude modulated coupling distributed feedback lasers," IEEE J. Quantum Electron., vol. 31, pp. 834-841, 1995.
3. T. Kobayashi, T. Kawakami, and Y. Furukawa, "Thermal diagnosis of dark lines in degraded GaAs-AlGaAs double-heterostructure lasers," J. Appl. Phys., vol. 14, pp. 508-513, 1975.
4. M. A. Matin, A. F. Jezierski, S. A. Bashar, D. E. Lacklison, T. M. Benson, T. S. Cheng, J. S. Roberts, T. E. Sale, J. W. Orton, C. T. Foxon, and A. A. Rezazadeh, "Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical cavity surface-emitting lasers," Electron. Lett., vol. 30, pp. 318-320, 1994.
5. T. C. Shen, G. B. Gao, and H. Morkoc, "Recent developments in ohmic contacts for III-V compound semiconductors," J. Vac. Sci. Technol. B, vol. 10, pp. 2113-2132, 1992.
6. H. H. Berger, "Contact resistance and contact resistivity," J. Electrochem. Soc., vol. 119, pp. 507-514, 1972.
7. T. J. Cunningham, L. J. Guido, J. C. Beggy, and R. C. Barker, "Annealed indium oxide transparent ohmic contacts to GaAs," J. Appl. Phys., vol. 71, pp. 1070-1072, 1992.
8. A. F. Jezierski, M. A. Matin, S. A. Bashar, T. S. Cheng, D. E. Lacklison, T. Foxon, T. M. Benson, M. Heath, J. Orton, and A. A. Rezazadeh, "Transparent indium-tin-oxide Ohmic contacts to both p- and n-GaAs for surface emitting lasers," in IEEE/LEOS '93 Proc., Nov. 15-18, 1993, paper OM4.2.
9. S. T. Srinivasan, C. F. Schaus, S. Sun, E. A. Armour, S. D. Hersee, and J. G. McInerney, "High power spatially coherent operation of unstable resonator semiconductor lasers with regrown lens trains," Appl. Phys. Lett., vol. 61, pp. 1272-1274, 1992.
10. Y. Fong, E. A. Armour, S. D. Hersee, and S. R. J. Brueck, "A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrate," J. Appl. Phys., vol. 75, pp. 3049-3055, 1994.
11. X. Wang and S. D. Hersee, "Direct observation of filamentation and temperature distribution in high-power semiconductor lasers," in Tech. Dig. Conf. Lasers Electro-Opt., 1995, paper THP3, pp. 354-355.