Fabrication and luminescence of etched quantum rings and vertically coupled dots

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 307-312

  Philipp, G E ^a   Mejia Galeana, J A ^a   Cassou, C ^a   Wang, P D ^a   Guasch, C ^a   Vogele, B ^a   Holland, M C ^a   Sotomayor Torres, C M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DRY ETCHING; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; EMISSION SPECTROSCOPY; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ETCHED QUANTUM RINGS; LINEWIDTH BROADENING; VERTICALLY COUPLED DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029756572     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)