Atomic structure of a Σ = 9 <011> Si3N4 tilt grain boundary

Materials Science Forum

Volumn 207-209, Issue PART 1, 1996, Pages 353-356

  Knowles, K M ^a   Turan, S ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Grain Boundary; High Resolution Electron Microscopy; Near Coincident Site Lattice; Silicon Nitride; Twin orientation

Indexed keywords

CERAMIC MATRIX COMPOSITES; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; CRYSTALLOGRAPHY; GRAIN BOUNDARIES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

DEFORMATION TWINNING CRYSTALLOGRAPHY; NEAR COINCIDENT SITE LATTICE; TWIN ORIENTATION;

SILICON NITRIDE;

EID: 0029756470     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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