Investigation of Si/SiGe heterostructures patterned by reactive ion etching

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 341-344

  Koster T ^a   Hadam, B ^a   Gondermann, J ^a   Spangenberg, B ^a   Roskos, H G ^a   Kurz, H ^a   Brunner, J ^b   Abstreiter, G ^b  

^a UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; FABRICATION; MASS SPECTROMETRY; MULTILAYERS; PHOTOLUMINESCENCE; PHOTORESISTS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

EXCITONIC EMISSION; NANOMETER STRUCTURES; PATTERN TRANSFER; PHOTOLUMINESCENCE MEASUREMENT;

HETEROJUNCTIONS;

EID: 0029755946     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00259-6     Document Type: Article

References (6)

1. Richard A. Soref, Proceedings of the IEEE, Vol.81 No. 12, 1685-1706, 1993
2. J. Brunner, U. Menczigar, E. Friess, and G. Abstreiter, Thin Solid Films, 222, 27-29, 1992
3. E. van der Drift, T. Zijlstra, R. Cheung, K. Werner, and S. Radelaar, MEE 23, 343-348, 1994
4. G. S. Oehrlein, Y. Zhang, G. M. W. Kroesen, E. de Fresart, and T. D. Bestwick, Appl. Phys. Lett. 58 (20), 2252-2254, 1991
5. J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Goßner and I. Eisele, MEE 27, 83-86, 1995
6. T. Köster, B. Hadam, J. Gondermann, B. Spangenberg, H. Roskos, H. Kurz, J. Vac. Sci. Technol., submitted