Fluorine-doped tin dioxide thin films prepared by radio-frequency magnetron sputtering

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 283-287

  Maruyama, Toshiro ^a   Akagi, Hisao ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; COMPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; FILM PREPARATION; FLUORINE; MAGNETRON SPUTTERING; TIN COMPOUNDS;

CRYSTALLINITY; PHYSICAL MEASUREMENTS; RADIO FREQUENCY MAGNETRON SPUTTERING; RADIO FREQUENCY POWER; SUBSTRATE TEMPERATURE; TIN DIOXIDE THIN FILMS; TIN FLUORIDE POWDER;

THIN FILMS;

EID: 0029755943     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836423     Document Type: Article

References (5)

1. T. Maruyama and K. Tabata, J. Appl. Phys., 68, 4282 (1990).
2. C. Geoffroy, G. Campet, F. Menil, J. Portier, J. Salardienne, and G. Couturier, Active Passive Elect. Comp., 14, 111 (1991).
3. B. Stjerna, E. Olsson, and C. G. Granqvist, J. Appl. Phys., 76, 3797 (1994).
4. T. Maruyama and T. Morishita, ibid., 76, 5809 (1994).
5. T. Maruyama and T. Morishita, ibid., 77, 6641 (1995).