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Volumn 158, Issue 1-2, 1996, Pages 49-52

Si and Zn doping of GaP grown by OMVPE using tertiarybutylphosphine

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

EID: 0029755857     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00341-X     Document Type: Article
Times cited : (7)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.