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Volumn 158, Issue 1-2, 1996, Pages 49-52
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Si and Zn doping of GaP grown by OMVPE using tertiarybutylphosphine
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Author keywords
[No Author keywords available]
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Indexed keywords
MOLECULAR BEAM EPITAXY;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DOPING;
SILICON COMPOUNDS;
GAS SOURCE MOLECULAR BEAM EPITAXY;
HALL MOBILITY;
PHOSPHINE HOLE CONCENTRATION;
TERTIARYBUTYLPHOSPHINE;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0029755857
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00341-X Document Type: Article |
Times cited : (7)
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References (19)
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