Electrical and structural properties of annealed epitaxial CeO2 films on Si(111) substrates

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 121-126

  Morshed, A H ^a   Tomita, M ^a   El Masry, N ^a   McLarty, P ^a   Parikh, N P ^a   Bedair, S M ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASER ABLATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

CERIUM DIOXIDE; OXIDE SILICON INTERFACE;

CERIUM COMPOUNDS;

EID: 0029755822     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)