Grain boundaries of controlled geometry in ZnO films grown by chemical vapor deposition: undoped and Bi-doped boundaries

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 55-60

  Majid, I ^a   Liu, Y ^a   Balluffi, R W ^a   Vander Sande, J B ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON MICROSCOPY; FILM GROWTH; GEOMETRY; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; X RAY ANALYSIS;

GRAIN BOUNDARY ATOMIC LEVEL STRUCTURE; NOMINALLY SINGLE CRYSTAL FILMS; RANDOM POLYCRYSTALLINE;

ZINC OXIDE;

EID: 0029755820     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)