Erbium tris(amide) compounds as source molecules for rare earth doping of semiconducting materials

Materials Research Society Symposium - Proceedings

Volumn 415, Issue , 1996, Pages 111-116

  Just, Oliver ^a   Greenwald, Anton C ^a   Rees Jr , William S ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; MELTING; MOLECULES; OPTOELECTRONIC DEVICES; RARE EARTH ELEMENTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SOLID STATE DEVICES;

ERBIUM CYCLOPENTADIENYL; METAL AMIDE COMPOUNDS; RARE EARTH ION;

ERBIUM COMPOUNDS;

EID: 0029755552     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)