Pulsed laser sputtering of the (100)GaAlAs surface

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 1099-1108

  Vivet, L ^a   Dubreuil, B ^a   Gibert Legrand, T ^a   Barthe, M F ^a,b  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; IONS; MASS SPECTROMETRY; MATHEMATICAL MODELS; MICROANALYSIS; PHOTOIONIZATION; PHOTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; SURFACE TREATMENT; X RAY SPECTROSCOPY;

ELECTRON MICROPROBE ANALYSIS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM ALUMINUM ARSENIDE; LASER FLUENCE; LASER RESONANT IONIZATION MASS SPECTROMETRY; PULSED LASER SPUTTERING; SHOT NUMBER;

PULSED LASER APPLICATIONS;

EID: 0029755422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360908     Document Type: Article

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