Titanium silicidation and secondary defect annihilation in ion beam processed SiGe layers

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 149-154

  Kyllesbech Larsen, K ^a   La Via, F ^a   Lombardo, S ^a   Raineri, V ^a   Donaton, R A ^a   Campisano, S U ^a  

^a CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRON DIFFRACTION; ION BEAMS; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHANNELLING RUTHERFORD BACKSCATTERING SPECTROMETRY; SECONDARY DEFECT ANNIHILATION; TITANIUM DISILICIDE; TITANIUM SILICIDATION; TRANSMISSION ELECTRON DIFFRACTION;

TITANIUM COMPOUNDS;

EID: 0029754985     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)