The van Hove singularity shift from the fermi level as a function of composition

Physica C: Superconductivity and its Applications

Volumn 257, Issue 1-2, 1996, Pages 160-166

  Giraldo, J ^a,b   Baquero, R ^a,b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERMI LEVEL; LANTHANUM COMPOUNDS; OXIDE SUPERCONDUCTORS; SUPERCONDUCTING TRANSITION TEMPERATURE;

TIGHT BINDING METHOD; VAN HOVE SINGULARITY SHIFT; VIRTUAL CRYSTAL APPROXIMATION;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0029754578     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4534(95)00681-8     Document Type: Article

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