Preparation of WSi2 by RTA annealing of CVD-W thin films

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 637-642

  Gesheva, K A ^a   Stoyanov, G I ^a   Gogova, D S ^a   Beshkov, G D ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; DECOMPOSITION; ELECTRIC RESISTANCE MEASUREMENT; FILM PREPARATION; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TUNGSTEN COMPOUNDS;

FILM THICKNESS; MONOCRYSTALLINE; SOLID STATE REACTION; TUNGSTEN DISILICIDES;

SEMICONDUCTING FILMS;

EID: 0029754162     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)