Real-time monitoring of GaAs(100) etching by surface photoabsorption

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 151-156

  Eng, Joseph Jr ^a   Fang, Hongbin ^a   Su, Chaochin ^a   Vemuri, Sujata ^a   Herman, Irving P ^a   Bent, Brian E ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; FLUXES; GALLIUM; HYDROGEN INORGANIC COMPOUNDS; MOLECULAR BEAMS; MONITORING; REFLECTOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SURFACES;

HYDROGEN CHLORIDE; POLARIZED REFLECTANCE SPECTROSCOPY; SURFACE DENSITIES; SURFACE PHOTOABSORPTION;

DRY ETCHING;

EID: 0029753968     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)