Characterization of AlGaAs/GaAs heterojunction bipolar transistors using photoreflectance and spectral ellipsometry

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 253-258

  Smith, Patricia B ^a   Kim, Tae S ^a   Magel, Lissa K ^a   Duncan, Walter M ^a   Ley, A Vance ^a   Brette, Nick A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; COMPOSITION; ELLIPSOMETRY; NONDESTRUCTIVE EXAMINATION; REFLECTOMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; CONTACT LAYER COMPOSITION; EMITTER LAYER; LAYER THICKNESS; PHOTOREFLECTANCE SPECTROSCOPY; SPECTRAL ELLIPSOMETRY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029753517     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)