Ti-salicide improvement by preamorphization for ULSI applications

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 89-94

  Chen, Chun Cho ^a   Wang, O F ^a   Jonckx, Franky ^a   Jenq, Jyh Shyang ^a   Maex, Karen ^a  

^a WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; ARSENIC; ELECTRIC CONDUCTIVITY; GRANULAR MATERIALS; ION IMPLANTATION; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SPUTTERING; ULSI CIRCUITS;

LOW DOSE ARSENIC IMPLANTATION; PHASE TRANSITION TEMPERATURE; PREAMORPHIZATION; SHEET RESISTANCE;

TITANIUM COMPOUNDS;

EID: 0029753479     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)