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Volumn 138, Issue 1-2, 1996, Pages 75-101

Radiation doping methods of semiconductor materials: The nuclear doping by charged particles

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGED PARTICLES; FERROELECTRIC MATERIALS; IMPURITIES; NUCLEAR PHYSICS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING MATERIALS;

EID: 0029753149     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159608211511     Document Type: Article
Times cited : (4)

References (46)
  • 4
    • 5344230001 scopus 로고
    • Proc. Second Intern. Conf., Columbia, MO, 1978, Plenum Press, New York
    • Neutron Transmutation Doping in Semiconductors (Proc. Second Intern. Conf., Columbia, MO, 1978, ed. by J. M. Meese), Plenum Press, New York (1979).
    • (1979) Neutron Transmutation Doping in Semiconductors
    • Meese, J.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.