메뉴 건너뛰기




Volumn 97, Issue 1, 1996, Pages 11-15

Reduction of the effects of InGaAs alloy disorder by using InAs/GaAs superlattices as the conduction channel in modulation-doped heterostructures

Author keywords

A. Nanostructures; A. Quantum wells; A. Semiconductors; B. Epitaxy

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MONOLAYERS; MOSFET DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

EID: 0029752098     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00599-4     Document Type: Article
Times cited : (2)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.