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Volumn 97, Issue 1, 1996, Pages 11-15
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Reduction of the effects of InGaAs alloy disorder by using InAs/GaAs superlattices as the conduction channel in modulation-doped heterostructures
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Author keywords
A. Nanostructures; A. Quantum wells; A. Semiconductors; B. Epitaxy
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Indexed keywords
COMPOSITION EFFECTS;
ELECTRIC PROPERTIES;
INTERFACES (MATERIALS);
MONOLAYERS;
MOSFET DEVICES;
PHOTOCONDUCTIVITY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR SUPERLATTICES;
ALLOY DISORDER;
CHANNEL THICKNESS;
INDIUM ARSENIDE;
MODULATION DOPED HETEROSTRUCTURES;
PHOTO-HALL MEASUREMENTS;
SHORT PERIOD SUPERLATTICES CHANNEL;
HETEROJUNCTIONS;
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EID: 0029752098
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(95)00599-4 Document Type: Article |
Times cited : (2)
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References (12)
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