The influence of ion beam parameters on pattern resolution

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 353-356

  De Jager, P W H ^a   Hagen, C W ^a   Kruit, P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRONS; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; NANOTECHNOLOGY; PHONONS;

ION BEAM PARAMETERS; ION SCATTERING; MONTE CARLO SIMULATION; PATTERN RESOLUTION; SECONDARY ELECTRON EFFECT; SECONDARY ELECTRONS; SOFTWARE PACKAGE TRIM;

ION BEAMS;

EID: 0029752084     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00262-6     Document Type: Article

References (9)

1. P.W.H. de Jager and P. Kruit, Applicability of focused ion beams for nanotechnology, Microelectronic Engineering 27 (1995), p.327-330.
2. K. Murata e.a., Monte Carlo simulation of fast secondary electron production in electron beam resists, J. Appl. Phys. 52(7) (1981), p.4396-4405.
3. J.S. Ro e.a., Mechanism of ion beam induced deposition of gold, J. Vac. Sci. Technol. B 12(1) (1994), p.73-77.
4. J.K. Biersack and L.G. Haggmark, A Monte Carlo computer program for the transport of energetic ions in amorphous targets, Nucl. Instr. and Meth. 174 (1980),p.257-269.
5. M.N. Özişik, Heat conduction, John Wiley & Sons, New York (1993).
6. L. Reimer, Image formation in low-voltage scanning electron microscopy, SPIE, Washington (1993).
7. M.P. Seah and W.A. Dench, Quantitative electron spectroscopy of surfaces, Surface and Interface Analysis 1(1) (1979),p.2-11.
8. K.T. Kohlmann e.a., Resolution limits in electron-beam induced tungsten deposition, J. Vac. Sci. Technol. B11(6), Nov/Dec 1993, pp.2219-2223
9. E.H.A. Granneman, Deposition methods in the IC technology, ASM International, Delft 6(1991).