Carrier induced transient electric fields in a p-i-n InP-InGaAs multiple-quantum-well modulator

IEEE Journal of Quantum Electronics

Volumn 32, Issue 1, 1996, Pages 43-52

  Bradley, P J ^a   Rigo, C ^a   Stano, A ^a  

^a CSELT   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; CHEMICAL BEAM EPITAXY; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; FREQUENCY RESPONSE; NONLINEAR OPTICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

CARRIER TRANSIENT ELECTRIC FIELDS; MULTIPLE QUANTUM WELL MODULATORS; NEGATIVE DELAYS; NONUNIFORMITY; OPTICAL NONLINEARITIES; TRANSIENT STARK SHIFTS; VALENCE BAND OFFSET;

LIGHT MODULATORS;

EID: 0029751929     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481919     Document Type: Article

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