An infrared optical field effect transistor with high speed response

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 299-300

  Chen, F Y ^a   Fang, Y K ^a   Sun, M J ^a   Chen, Jiann Ruey ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; INFRARED RADIATION; INTEGRATED OPTOELECTRONICS; LEAD COMPOUNDS; OPTICAL SENSORS; POLARIZATION; SEMICONDUCTING SILICON; THIN FILMS;

DRAIN CONDUCTANCE; INFRARED OPTICAL FIELD EFFECT TRANSISTOR; INFRARED SENSORS; LOAD TITANATE; SURFACE MOBILITY;

FIELD EFFECT TRANSISTORS;

EID: 0029751893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116065     Document Type: Article

References (6)

1. 3 Thin Film for High Response Speed Pyroelectric IR Imager,'' NIKKEI Electronics Asia, January 1993, pp. 36-37.
2. M. Okuyama and Y. Hamakawa, Jpn. Annu. Rev. Electron. Comput. Telecommun. 21, 265 (1985).
3. M. Okuyama and Y. Hamakawa, Ferroelectrics INS 63, 243 (1985).
4. Y. Matsui, Growth of ferroelectric thin film and its application to semiconductor heterojunction devices, Ph.D. dissertation, Osaka University Faculty of Engineering Science Toyonaka, Osaka, February 1982, Chap. 4.
5. J. P. Uyemura, Fundamentals of MOS Digital Integrated Circuits (Addison Wesley, Reading, MA, 1988), p. 21, Chap. 1.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 7.