Localization phenomena, photoluminescence and Raman scattering in nc-Si and nc-Si/a-SiO2 composites

Materials Research Society Symposium - Proceedings

Volumn 405, Issue , 1996, Pages 141-152

  Veprek, S ^a   Wirschem, T ^a   Rueckschloss, M ^a   Ossadnik, C ^a   Dian, J ^a   Perna, S ^a   Gregora, I ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTROMAGNETIC WAVE ABSORPTION; GRAIN BOUNDARIES; MICROWAVE MEASUREMENT; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; RAMAN SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EXCITATION SPECTRA; MICROWAVE ABSORPTION; PHOTOGENERATED CHARGE CARRIERS; QUANTUM LOCALIZATION; RED SHIFT;

METALLIC MATRIX COMPOSITES;

EID: 0029747841     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (38)