Photoluminescence related to the 2-dimensional electron gas in modulation doped GaN/ALGaN structures

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 595-600

  Bergman, J P ^a   Lundstrom, T ^a   Monemar, B ^a   Amano, H ^a   Akasaki, I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONS; EMISSION SPECTROSCOPY; ENERGY GAP; EXCITONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; BANDGAP; ELECTRON GAS; GALLIUM NITRIDE; TWO DIMENSIONAL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029747740     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)