Ultrafast spectroscopy of carriers and excitons in semiconductor microcavities

Progress in Crystal Growth and Characterization of Materials

Volumn 33, Issue 1-3, 1996, Pages 155-160

  Norris, T B ^a   Rhee, J K ^a   Lai, R ^a   Citrin, D S ^a   Nishioka, M ^b   Arakawa, Y ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CHARGE CARRIERS; ELECTRON SCATTERING; EXCITONS; MIRRORS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMOLUMINESCENCE; ULTRAFAST PHENOMENA;

DISTRIBUTED BRAGG REFLECTORS; GAIN SWITCHED LASING; RESONANT EXCITATION; SEMICONDUCTOR MICROCAVITIES; ULTRAFAST SPECTROSCOPY; VACUUM-RABI OSCILLATIONS;

EMISSION SPECTROSCOPY;

EID: 0029747553     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/0960-8974(96)83634-5     Document Type: Article

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