Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

Superlattices and Microstructures

Volumn 20, Issue 3, 1996, Pages 307-315

  Connolly, K M ^a   Pivin Jr , D P ^a   Ferry, D K ^a   Wieder, H H ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ballistic quantum dots; In plane gate; InGaAs

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; LOW TEMPERATURE EFFECTS; MAGNETORESISTANCE; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTANCE FLUCTUATION; FOURIER SPECTRUM; IN PLANE GATE TECHNIQUE; INDIUM GALLIUM ARSENIDE; MEAN FREE PATH; TWO DIMENSIONAL ELECTRON GAS; WEAK LOCALIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029746807     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0082     Document Type: Article

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