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Volumn 20, Issue 3, 1996, Pages 307-315
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Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot
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Author keywords
Ballistic quantum dots; In plane gate; InGaAs
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Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
ELECTRON SCATTERING;
LOW TEMPERATURE EFFECTS;
MAGNETORESISTANCE;
REACTIVE ION ETCHING;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
CONDUCTANCE FLUCTUATION;
FOURIER SPECTRUM;
IN PLANE GATE TECHNIQUE;
INDIUM GALLIUM ARSENIDE;
MEAN FREE PATH;
TWO DIMENSIONAL ELECTRON GAS;
WEAK LOCALIZATION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0029746807
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1006/spmi.1996.0082 Document Type: Article |
Times cited : (17)
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References (20)
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