SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 20, Issue 3, 1996, Pages 343-347

Numerical modeling of silicon quantum dots

(3) Udipi, S a Vasileska, D a Ferry, D K a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFERENCE EQUATIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; THREE DIMENSIONAL;

CONTINUITY EQUATION; ELECTRON DENSITY DISTRIBUTION; POISSON EQUATION; POTENTIAL ENERGY PROFILE; SILICON QUANTUM DOTS; STRONGLY IMPLICIT PROCEDURE OF STONE; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029746621 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.1996.0087 Document Type: Article

Times cited : (15)

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