Selective TiSi2 formation using TiCl4(g), Si(s) and H2(g): a study of the mask loading phenomena

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 295-300

  Gladden, D B ^a   Weintraub, C E ^a   Ozturk, M C ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; ETCHING; REACTION KINETICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON; SILICON NITRIDE; SUBSTRATES;

LOADING EFFECT; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SELF ALIGNED SILICIDE PROCESS; SUBSTRATE ETCHING; TITANIUM CHLORIDE; TITANIUM SILICIDE;

TITANIUM COMPOUNDS;

EID: 0029736578     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)