Picosecond four-wave-mixing in GaN epilayers at 532 nm

Applied Physics Letters

Volumn 68, Issue 5, 1996, Pages 587-589

  Taheri, Bahman ^a   Hays, J ^a   Song, J J ^a   Goldenberg, B ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; FOUR WAVE MIXING; LIGHT ABSORPTION; LIGHT SCATTERING; OPTICAL VARIABLES MEASUREMENT; PHOTONS; REFRACTIVE INDEX; SIGNAL TO NOISE RATIO;

CARRIER LIFETIME; CARRIER RECOMBINATION; DECAY RATES; GALLIUM NITRIDE; PULSE PROBE DEGENERATE FOUR WAVE; TIME RESPONSE; TWO PHOTON ABSORPTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029736507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116476     Document Type: Article

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