Structural and ferroelectric properties of epitaxial La0.5Sr0.5CoO3/Ba0.4Sr0.6TiO3 /La0.5Sr0.5CoO3 thin-film capacitors on silicon for DRAM applications

Materials Research Society Symposium - Proceedings

Volumn 401, Issue , 1996, Pages 183-188

  Kung, Pang Jen ^a   Fenner, David B ^a   Li, Qi ^a  

^a Advanced Fuel Research Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; HETEROJUNCTIONS; HYSTERESIS; OXIDES; PERMITTIVITY; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); THIN FILM DEVICES; ZIRCONIA;

DYNAMIC RANDOM ACCESS MEMORY; HYSTERESIS CHARACTERISTICS; PULSED LASER DEPOSITION; TEMPERATURE DEPENDENT RESISTANCE CURVE; YTTRIA-STABILIZED ZIRCONIA;

CAPACITORS;

EID: 0029736461     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)