Temperature sensor on boron ion implanted diamond

Materials Research Society Symposium - Proceedings

Volumn 416, Issue , 1996, Pages 249-254

  Job, R ^a   Denisenko, A V ^a   Zaitsev, A M ^a   Werner, M ^a   Melnikov, A A ^a   Fahrner, W R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC PROPERTIES; FABRICATION; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING BORON; SUBSTRATES; THERMAL CONDUCTIVITY;

ELECTRICAL COMPENSATION RATIO; POST IMPLANTATION ANNEALING TIME; RADIATION DEFECTS; TEMPERATURE SENSORS;

SEMICONDUCTING DIAMONDS;

EID: 0029735872     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)