Spectroscopic ellipsometry of strained Si/Ge superlattices grown by magnetron sputter epitaxy

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 383-387

  Guizzetti, G ^a   Patrini, M ^a   Sutter, P ^a   von Kanel, H ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRON TRANSITIONS; ELLIPSOMETRY; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SUBSTRATES;

DIELECTRIC FUNCTION; MAGNETRON SPUTTER EPITAXY; SILICON GERMANIDE; SILICON GERMANIUM;

SEMICONDUCTOR SUPERLATTICES;

EID: 0029735461     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)