Optical characterization of AlxGa1-xSb/GaSb epitaxial layers

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 389-394

  Di Lernia, S ^a   Geddo, M ^a   Guizzetti, G ^a   Patrini, M ^a   Bosacchi, A ^a   Franchi, S ^a   Magnanini, R ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; DIELECTRIC PROPERTIES; ELLIPSOMETRY; EPITAXIAL GROWTH; LOW TEMPERATURE PROPERTIES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

ALUMINUM GALLIUM ANTIMONY; BEAM EQUIVALENT PRESSURE RATIO; DIELECTRIC FUNCTIONS; ENERGY SHIFT MODEL; OPTICAL CHARACTERIZATION; SECOND ENERGY DERIVATIVES;

HETEROJUNCTIONS;

EID: 0029735396     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)