Auger layer growth calculations for A/B/A heterostructures

Journal of Physics D: Applied Physics

Volumn 29, Issue 1, 1996, Pages 240-245

  Venables, J A ^a,b   Li, Y ^a   Hembree, G G ^a   Noro, H ^b,c   Persaud, R ^b,d  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF SUSSEX   (United Kingdom)

^c JFE STEEL CORPORATION   (Japan)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CALCULATIONS; COMPOSITION; GEOMETRY; INTERDIFFUSION (SOLIDS); MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH;

AUGER LAYER GROWTH CALCULATION; GLANCING INCIDENCE; INELASTIC MEAN FREE PATH RATIOS; NEAR SURFACE COMPOSITION; SURFACE SENSITIVITY;

HETEROJUNCTIONS;

EID: 0029735189     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/1/035     Document Type: Article

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