Optical and electrical characterisation of plasma processed N-GaAs

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 327-332

  Murtagh, M ^a   Herbert, P A F ^a   Kelly, P V ^a   Crean, G M ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHARACTERIZATION; CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ELLIPSOMETRY; PHOTOLUMINESCENCE; PLASMA ETCHING; RAMAN SCATTERING; REACTIVE ION ETCHING; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

CAPACITANCE VOLTAGE PROFILING; ETCH GAS PRESSURE; PHOTOREFLECTANCE; PLASMA PROCESSED GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029734964     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)