Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 710-716

  Liu, Q ^a   Brennemann, A ^a   Hardtdegen, H ^b   Lindner, A ^b   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER SIMULATION; CURVE FITTING; DOPING (ADDITIVES); HALL EFFECT; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; REFLECTION; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

BRAGG REFLECTION; HALL EFFECT MEASUREMENT; HIGH RESOLUTION X RAY DIFFRACTION; PENDELLOSUNG FRINGES; SELF COMPENSATION EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029734833     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360815     Document Type: Article

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