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Volumn 31, Issue 1, 1996, Pages 128-131

Design of a low-power 10 Gb/s Si bipolar 1 : 16-demultiplexer IC

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRIC CURRENTS; FLIP FLOP CIRCUITS; RESISTORS; SEMICONDUCTING SILICON; TIMING DEVICES; TRANSISTORS;

EID: 0029734513     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.485875     Document Type: Article
Times cited : (5)

References (6)
  • 2
    • 0028378257 scopus 로고
    • A 20 Gb/s silicon bipolar 1 : 4-demultiplexer IC
    • Feb.
    • Z. H. Lao, J. N. Albers, U. Langmann, and E. Schlag, "A 20 Gb/s silicon bipolar 1 : 4-demultiplexer IC," IEEE J. Lightwave Technol., vol. 12, no. 2, pp. 320-324, Feb. 1994.
    • (1994) IEEE J. Lightwave Technol. , vol.12 , Issue.2 , pp. 320-324
    • Lao, Z.H.1    Albers, J.N.2    Langmann, U.3    Schlag, E.4
  • 3
    • 0027558341 scopus 로고
    • 10-Gb/s Silicon bipolar 8 : 1 multiplexer and 1 : 8 demultiplexer
    • Mar.
    • C. L. Stout and J. Doernberg, "10-Gb/s Silicon bipolar 8 : 1 multiplexer and 1 : 8 demultiplexer," IEEE J. Solid-State Circuits, vol. 28, no. 3, pp. 339-343, Mar. 1993.
    • (1993) IEEE J. Solid-State Circuits , vol.28 , Issue.3 , pp. 339-343
    • Stout, C.L.1    Doernberg, J.2
  • 4
    • 0028516012 scopus 로고
    • A voltage compensated series-gate bipolar circuit operating at sub-2 V
    • Oct.
    • H. Sato, K. Ueda, N. Sasaki, T. Ikeda, and K. Mashiko, "A voltage compensated series-gate bipolar circuit operating at sub-2 V," IEEE J. Solid-State Circuits, vol. 29, no. 10, pp. 1200-1205, Oct. 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , Issue.10 , pp. 1200-1205
    • Sato, H.1    Ueda, K.2    Sasaki, N.3    Ikeda, T.4    Mashiko, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.