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Volumn 97, Issue 4, 1996, Pages 279-283

Soft disorder effects in the conductance quantization in quantum point contacts: Indirect backscattering statistics

Author keywords

A. disordered systems; A. nanostructures; D. electronic transport; D. localized electronic states

Indexed keywords

BACKSCATTERING; CRYSTAL IMPURITIES; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; NANOSTRUCTURED MATERIALS; ORDER DISORDER TRANSITIONS; SEMICONDUCTOR DEVICE MODELS;

EID: 0029734462     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00511-0     Document Type: Article
Times cited : (3)

References (25)
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    • J.A. Nixon & J.H. Davies, Phys. Rev. B41, 7929 (1990); M.J. Laughton, J.R. Barker, J.A. Nixon & J.H. Davies, Phys. Rev. B44, 1150 (1991); J.A. Nixon, J.H. Davies & H.U. Baranger, Phys. Rev. B43, 12638 (1991).
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    • J.A. Nixon & J.H. Davies, Phys. Rev. B41, 7929 (1990); M.J. Laughton, J.R. Barker, J.A. Nixon & J.H. Davies, Phys. Rev. B44, 1150 (1991); J.A. Nixon, J.H. Davies & H.U. Baranger, Phys. Rev. B43, 12638 (1991).
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    • note
    • e ≤ 0.03 [11]. As we shall see, the above contribution is much less than the characteristic conductance fluctuations due to the mechanisms investigated in our paper.
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    • note
    • Some of the empirical distributions have a tail stretching into the negative g region. The two possible mechanisms of this effect are (i) tunneling through the localized states in the transition regime [8]; (ii) narrowing of the aperture of the contact by the impurity potential, which makes the conductance steps sharper [12].
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    • note
    • The mean square error of the fitting was practically the same as when we varied them both independently.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.