Gallium arsenide etching using ion beams from hydrogen/methane mixtures

Vacuum

Volumn 47, Issue 1, 1996, Pages 39-44

  Villalvilla, J M ^a   Santos, C ^a   Valles Abarca J A ^a  

^a UNIVERSITY OF ALICANTE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CURRENT DENSITY; DEPOSITION; HYDROGEN; ION BEAMS; IONS; MASS SPECTROMETRY; METHANE; MIXTURES; PLASTIC FILMS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE;

ARC CURRENT; BLACK POLYMERIC FILMS; ETCH TIME; HYDROGEN/METHANE MIXTURES; KAUFMAN SOURCE; RESPONSE SURFACE EXPERIMENTAL DESIGN; SOLENOID CURRENT; TRIMETHYLGALLIUM IONS; VOLTAGE ACCELERATION;

ETCHING;

EID: 0029734371     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(95)00194-8     Document Type: Article

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