In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 135-138

  Kaya, I I ^a,c   Dellow, M W ^a   Bending, S J ^a   Linfield, E H ^b   Rose, P D ^b   Ritchie, D A ^b   Jones, G A C ^b  

^a UNIVERSITY OF BATH   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; HOT CARRIERS; IN SITU PROCESSING; ION BEAMS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSISTORS;

HOT ELECTRON STRUCTURE; HOT ELECTRON TRANSISTOR OSCILLATOR; ION BEAM IMPLANTATION;

ION IMPLANTATION;

EID: 0029734140     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/004     Document Type: Article

References (5)

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3. Linfield E H, Jones GAC, Ritchie D A and Thompson JH 1993 Semicond. Sci. Technol. 8 415
4. Brill B and Heiblum M 1994 Phys. Rev. B 49 14 762
5. Dellow M W, Cronin N J and Bending S J 1994 Appl. Phys. Lett. 65 2463