Free-carrier absorption in n-type gallium arsenide films for polar optical phonon scattering

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 781-785

  Wu, Chhi Chong ^a   Lin, Chau Jy ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRON ABSORPTION; ELECTRON SCATTERING; FREQUENCIES; NUMERICAL ANALYSIS; PHONONS; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CARRIER CONFINEMENT; ELECTRON GAS; ENERGY BAND; FREE CARRIER ABSORPTION; MAXWELL-BOLTZMANN EQUATION; TRANSITION MATRIX METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029734022     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360825     Document Type: Article

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