A dislocation formation model of trench-induced dislocations in dynamic random access memories

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 210-215

  Dellith, M ^a,b   Booker, G R ^a   Kolbesen, B O ^b,d   Bergholz, W ^b   Gelsdorf, F ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b SIEMENS AG   (Germany)

^c IBM   (France)

^d GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ION IMPLANTATION; LEAKAGE CURRENTS; NUCLEATION; OPTICAL MICROSCOPY; OXIDATION; RANDOM ACCESS STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

DYNAMIC RANDOM ACCESS MEMORIES; ELECTRIC FAILURE; SECCO-ETCHING; TRENCH CAPACITOR MEMORY CELLS; TRENCH INDUCED DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 0029732996     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836410     Document Type: Article

References (9)

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